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Samsung M471B5173QH0-YK0 4GB
Corsair CMT32GX4M4C3200C14 8GB

Samsung M471B5173QH0-YK0 4GB vs Corsair CMT32GX4M4C3200C14 8GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
Corsair CMT32GX4M4C3200C14 8GB

Corsair CMT32GX4M4C3200C14 8GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
Corsair CMT32GX4M4C3200C14 8GB 需要考虑的原因
Corsair CMT32GX4M4C3200C14 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 45
    左右 -96% 更低的延时
  • 更快的读取速度，GB/s
    18.9 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.9 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Corsair CMT32GX4M4C3200C14 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 23
  • 读取速度，GB/s
    12.3 left arrow 18.9
  • 写入速度，GB/s
    8.0 left arrow 16.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 3936

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

Corsair CMT32GX4M4C3200C14 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMT32GX4M4C3200C14 8GB
Corsair CMT32GX4M4C3200C14 8GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
Golden Empire CL14-14-14 D4-2400 16GB
Golden Empire CL14-14-14 D4-2400 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-2400C16-16GRS 16GB
G Skill Intl F4-2400C16-16GRS 16GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Avant Technology W6451U67J5213NB 4GB
Avant Technology W6451U67J5213NB 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Crucial Technology BLT8G4D30AETA.K16FD 8GB
Crucial Technology BLT8G4D30AETA.K16FD 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMD32GX4M4B3200C16 8GB
Corsair CMD32GX4M4B3200C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Corsair CM4X8GF2400C16S4 8GB
Corsair CM4X8GF2400C16S4 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology BLS8G4D26BFSE.16FBD2 8GB
Crucial Technology BLS8G4D26BFSE.16FBD2 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Kingston 9905712-034.A00G 16GB
Kingston 9905712-034.A00G 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
PUSKILL PJ16TFK1GM8 16GB
PUSKILL PJ16TFK1GM8 16GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Samsung M393A5143DB0-CPB 4GB
Samsung M393A5143DB0-CPB 4GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
G Skill Intl F4-2400C15-8GTZR 8GB
G Skill Intl F4-2400C15-8GTZR 8GB
内存RAM