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SK Hynix HMT451S6BFR8A-PB 4GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB

SK Hynix HMT451S6BFR8A-PB 4GB vs Micron Technology 8ATF1G64AZ-3G2R1 8GB

总分
star star star star star
SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分
star star star star star
Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

差异 规格 评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB 需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
Micron Technology 8ATF1G64AZ-3G2R1 8GB 需要考虑的原因
Micron Technology 8ATF1G64AZ-3G2R1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 44
    左右 -42% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 7.8
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 31
  • 读取速度，GB/s
    12.3 left arrow 16.9
  • 写入速度，GB/s
    7.8 left arrow 12.4
  • 内存带宽，mbps
    12800 left arrow no data
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow , 1.20000005, CAS Supported:
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow no data
  • 排名PassMark (越多越好)
    1977 left arrow 3043

SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较

Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB RAM的比较

V-Color Technology Inc. TL48G30S8KSRGB15 8GB
SK Hynix HMA851U6JJR6N-VK 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Asgard VMA45UG-MEC1U2BQ2 8GB
内存RAM
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Kingston ACR16D3LS1KNG/8G 8GB
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内存RAM
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Kingston 99P5474-014.A00LF 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM