Samsung M471B5173QH0-YK0 4GB vs Crucial Technology BL32G36C16U4BL.M16FB 32GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Crucial Technology BL32G36C16U4BL.M16FB 32GB

Crucial Technology BL32G36C16U4BL.M16FB 32GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Crucial Technology BL32G36C16U4BL.M16FB 32GB

需要考虑的原因
Crucial Technology BL32G36C16U4BL.M16FB 32GB

报告一个错误

低于PassMark测试中的延时，ns

28 45

左右 -61% 更低的延时
更快的读取速度，GB/s

18.7 12.3

测试中的平均数值
更快的写入速度，GB/s

18.1 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BL32G36C16U4BL.M16FB 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 28
读取速度，GB/s

12.3 18.7
写入速度，GB/s

8.0 18.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1992 4164

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Smart Modular SMS4WEC8C2K0446FCG 16GB

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Crucial Technology BL8G36C16U4B.M8FE1 8GB

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Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

AMD R748G2400S2S 8GB

AMD R748G2400S2S 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

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G Skill Intl F4-3000C15-8GVS 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Samsung M386A8K40BM1-CRC 64GB

Samsung M386A8K40BM1-CRC 64GB

Mushkin 991586 2GB

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Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB