Samsung M471B5173QH0-YK0 4GB vs Crucial Technology BLS8G4S240FSD.16FAR 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Crucial Technology BLS8G4S240FSD.16FAR 8GB

Crucial Technology BLS8G4S240FSD.16FAR 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Crucial Technology BLS8G4S240FSD.16FAR 8GB

需要考虑的原因
Crucial Technology BLS8G4S240FSD.16FAR 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 45

左右 -80% 更低的延时
更快的读取速度，GB/s

15.5 12.3

测试中的平均数值
更快的写入速度，GB/s

12.7 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BLS8G4S240FSD.16FAR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 25
读取速度，GB/s

12.3 15.5
写入速度，GB/s

8.0 12.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1992 2685

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Elpida EBJ40UG8EFU5-GNL-F 4GB

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Kingston 99U5429-007.A00LF 2GB

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Corsair CM4X16GC3600C18K2D 16GB

Corsair CM4X16GC3600C18K2D 16GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

G Skill Intl F4-4000C19-16GTZSW 16GB

G Skill Intl F4-4000C19-16GTZSW 16GB

SK Hynix HMT151R7TFR4C-H9 4GB

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Kingston 9965589-024.D01G 16GB

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Samsung M471B5173EB0-YK0 4GB

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SanMax Technologies Inc. SMD-8G28HP-21P 8GB

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Micron Technology 9905625-004.A03LF 8GB

Micron Technology 9905625-004.A03LF 8GB