Samsung M471B5173QH0-YK0 4GB vs Essencore Limited IM48GU88N26-FFFHMZ 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Essencore Limited IM48GU88N26-FFFHMZ 8GB

Essencore Limited IM48GU88N26-FFFHMZ 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

45 62

左右 27% 更低的延时

Essencore Limited IM48GU88N26-FFFHMZ 8GB

需要考虑的原因
Essencore Limited IM48GU88N26-FFFHMZ 8GB

报告一个错误

更快的读取速度，GB/s

17.4 12.3

测试中的平均数值
更快的写入速度，GB/s

8.7 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Essencore Limited IM48GU88N26-FFFHMZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 62
读取速度，GB/s

12.3 17.4
写入速度，GB/s

8.0 8.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1992 2086

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Swissbit MEU25664D6BC2EP-30 2GB

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Ramaxel Technology RMUA5180MH78HBF-2666 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Maxsun MSD48G26Q3 8GB

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SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

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Kingston 99U5403-465.A00LF 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Crucial Technology CT8G4SFS824A.C8FJ 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-3600C16-16GTRG 16GB

G Skill Intl F4-3600C16-16GTRG 16GB