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Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2400C16-8GRS 8GB
比较
Samsung M471B5173QH0-YK0 4GB vs G Skill Intl F4-2400C16-8GRS 8GB
总分
Samsung M471B5173QH0-YK0 4GB
总分
G Skill Intl F4-2400C16-8GRS 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
需要考虑的原因
G Skill Intl F4-2400C16-8GRS 8GB
报告一个错误
低于PassMark测试中的延时,ns
34
45
左右 -32% 更低的延时
更快的读取速度,GB/s
15.4
12.3
测试中的平均数值
更快的写入速度,GB/s
11.9
8.0
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2400C16-8GRS 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
34
读取速度,GB/s
12.3
15.4
写入速度,GB/s
8.0
11.9
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1992
2780
Samsung M471B5173QH0-YK0 4GB RAM的比较
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
G Skill Intl F4-2400C16-8GRS 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2400C16-8GRS 8GB
Corsair CMX4GX3M2A1600C9 2GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA82GU7MFR8N-TF 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905625-036.A00G 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CM4B16G7L2666A16K2-O 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD32GX4M4B2133C10 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4400C19-16GTZR 16GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Corsair CMW64GX4M4K3600C18 16GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMK32GX4M2A2800C16 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
Samsung M378B5773DH0-CH9 2GB
Corsair CM4X4GF3000C15K4 4GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology CT8G4SFS824A.C8FDD1 8GB
报告一个错误
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Bug description
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