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Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3200C18-8GRS 8GB

Samsung M471B5173QH0-YK0 4GB vs G Skill Intl F4-3200C18-8GRS 8GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
G Skill Intl F4-3200C18-8GRS 8GB

G Skill Intl F4-3200C18-8GRS 8GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
G Skill Intl F4-3200C18-8GRS 8GB 需要考虑的原因
G Skill Intl F4-3200C18-8GRS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 45
    左右 -55% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3200C18-8GRS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 29
  • 读取速度，GB/s
    12.3 left arrow 17.2
  • 写入速度，GB/s
    8.0 left arrow 13.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 3199

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

G Skill Intl F4-3200C18-8GRS 8GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
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内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-3200C14-16GTZSW 16GB
G Skill Intl F4-3200C14-16GTZSW 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3200C16-8GTZRN 8GB
G Skill Intl F4-3200C16-8GTZRN 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
INTENSO 4GB
INTENSO 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C15-8GVR 8GB
G Skill Intl F4-2400C15-8GVR 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMV8GX4M1L2400C16 8GB
Corsair CMV8GX4M1L2400C16 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
内存RAM
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A-DATA Technology ADOVE1A0834E 1GB
King Tiger Technology Tigo-2400MHz-4G 4GB
King Tiger Technology Tigo-2400MHz-4G 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
SK Hynix HMA82GS6CJR8N-XN 16GB
SK Hynix HMA82GS6CJR8N-XN 16GB
内存RAM
Samsung M378A1K43DB2-CTD 8GB
Samsung M378A1K43DB2-CTD 8GB
Asgard VMA45UG-MEC1U2AW2 8GB
Asgard VMA45UG-MEC1U2AW2 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
King Tiger Technology Tigo-2133Mhz-8G 8GB
King Tiger Technology Tigo-2133Mhz-8G 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Ramaxel Technology RMUA5090KB78HAF2133 8GB
Ramaxel Technology RMUA5090KB78HAF2133 8GB
内存RAM