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Samsung M471B5173QH0-YK0 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

Samsung M471B5173QH0-YK0 4GB vs Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB 需要考虑的原因
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 45
    左右 -22% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 37
  • 读取速度，GB/s
    12.3 left arrow 15.4
  • 写入速度，GB/s
    8.0 left arrow 12.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 2356

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9905598-040.A00G 16GB
Kingston 9905598-040.A00G 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMSX64GX4M4A2666C18 16GB
Corsair CMSX64GX4M4A2666C18 16GB
内存RAM
A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR3L 1333G 4GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Mushkin MR[ABC]4U320GJJM32G 32GB
Mushkin MR[ABC]4U320GJJM32G 32GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3866C18-8GTZR 8GB
G Skill Intl F4-3866C18-8GTZR 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Corsair CMD32GX4M2B2800C14 16GB
Corsair CMD32GX4M2B2800C14 16GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Corsair CM4X16GE2666C16K4 16GB
Corsair CM4X16GE2666C16K4 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Corsair CMD32GX4M2B2800C14 16GB
Corsair CMD32GX4M2B2800C14 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
内存RAM
Crucial Technology BLS8G3N169ES4.16FE 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Kingston 9905702-120.A00G 8GB
Kingston 9905702-120.A00G 8GB
内存RAM