Samsung M471B5173QH0-YK0 4GB vs Heoriady M471A1K43CB1-CTD 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Heoriady M471A1K43CB1-CTD 8GB

Heoriady M471A1K43CB1-CTD 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

45 51

左右 12% 更低的延时
更快的读取速度，GB/s

12.3 10.5

测试中的平均数值
更快的写入速度，GB/s

8.0 5.5

测试中的平均数值

Heoriady M471A1K43CB1-CTD 8GB

需要考虑的原因
Heoriady M471A1K43CB1-CTD 8GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Heoriady M471A1K43CB1-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 51
读取速度，GB/s

12.3 10.5
写入速度，GB/s

8.0 5.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1992 1941

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905713-004.A00G 4GB

Kingston 9905713-004.A00G 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology BLT4G4D30AETA.K8FE 4GB

Crucial Technology BLT4G4D30AETA.K8FE 4GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Avant Technology J641GU42J7240N3 8GB

Avant Technology J641GU42J7240N3 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Panram International Corporation W4U2400PS-8G 8GB

Panram International Corporation W4U2400PS-8G 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

G Skill Intl F4-2666C16-8GRB 8GB

G Skill Intl F4-2666C16-8GRB 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Corsair CMV16GX4M1A2133C15 16GB

Corsair CMV16GX4M1A2133C15 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Crucial Technology BLS8G4D32AESTK.M8FE 8GB

Crucial Technology BLS8G4D32AESTK.M8FE 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Crucial Technology CT8G4DFD824A.C16FF 8GB

Crucial Technology CT8G4DFD824A.C16FF 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT4G4DFS824A.C8FBD2 4GB

Crucial Technology CT4G4DFS824A.C8FBD2 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Corsair CM4X16GE2400C16S4 16GB

Corsair CM4X16GE2400C16S4 16GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Essencore Limited KD48GU880-26N160T 8GB

Essencore Limited KD48GU880-26N160T 8GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

Crucial Technology CT16G4SFD8266.16FE1 16GB

Crucial Technology CT16G4SFD8266.16FE1 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB