RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
比较
Samsung M471B5173QH0-YK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
总分
Samsung M471B5173QH0-YK0 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
更快的读取速度,GB/s
12.3
11.1
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
报告一个错误
低于PassMark测试中的延时,ns
34
45
左右 -32% 更低的延时
更快的写入速度,GB/s
9.5
8.0
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
34
读取速度,GB/s
12.3
11.1
写入速度,GB/s
8.0
9.5
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1992
2319
Samsung M471B5173QH0-YK0 4GB RAM的比较
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB RAM的比较
Samsung M378A1K43BB1-CPB 8GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5273DH0-CH9 4GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
Apacer Technology 78.B1GET.AU00C 4GB
Samsung M393A2K40BB0-CPB 16GB
Samsung M471B1G73QH0-YK0 8GB
Apacer Technology 78.C1GMM.AUF0B 8GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Mushkin 99[2/7/4]205F 8GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston 9905701-006.A00G 16GB
Kingston 9965525-058.A00LF 8GB
Corsair CMW64GX4M2E3200C16 32GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF552C40-16 16GB
G Skill Intl F4-4400C19-16GVK 16GB
Kingston KHX1600C9S3L/8G 8GB
Apacer Technology D12.2344DT.001 4GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3866C18-8GTZSW 8GB
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-4400C18-8GTRG 8GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CM4X16GC3200C16K4 16GB
Samsung M393B1G70QH0-YK0 8GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
报告一个错误
×
Bug description
Source link