Samsung M471B5173QH0-YK0 4GB vs Kingston 9905711-038.A00G 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Kingston 9905711-038.A00G 8GB

Kingston 9905711-038.A00G 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Kingston 9905711-038.A00G 8GB

需要考虑的原因
Kingston 9905711-038.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 45

左右 -55% 更低的延时
更快的读取速度，GB/s

17.1 12.3

测试中的平均数值
更快的写入速度，GB/s

13.3 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Kingston 9905711-038.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 29
读取速度，GB/s

12.3 17.1
写入速度，GB/s

8.0 13.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1992 3181

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited IM4AGU88N26-GIIHMB 16GB

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Samsung M393B1G70BH0-CK0 8GB

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Crucial Technology CT8G4DFS8213.C8FAD1 8GB

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Apacer Technology 78.C1GQB.4032B 8GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Apacer Technology 78.C1GS7.AUC0B 8GB

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Samsung M471A5244CB0-CWE 4GB

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Kingston 9965525-018.A00LF 4GB

G Skill Intl F4-3600C16-16GTZNC 16GB

G Skill Intl F4-3600C16-16GTZNC 16GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

A-DATA Technology AO1P26KCST2-BZISHC 16GB

A-DATA Technology AO1P26KCST2-BZISHC 16GB

Kingston ACR512X64D3S13C9G 4GB

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V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB