Samsung M471B5173QH0-YK0 4GB vs Kingston HP32D4U8S8ME-8XR 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Kingston HP32D4U8S8ME-8XR 8GB

Kingston HP32D4U8S8ME-8XR 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Kingston HP32D4U8S8ME-8XR 8GB

需要考虑的原因
Kingston HP32D4U8S8ME-8XR 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 45

左右 -55% 更低的延时
更快的读取速度，GB/s

17.2 12.3

测试中的平均数值
更快的写入速度，GB/s

15.4 8.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Kingston HP32D4U8S8ME-8XR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 29
读取速度，GB/s

12.3 17.2
写入速度，GB/s

8.0 15.4
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1992 3461

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B2G70QH0-CMA 16GB

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Kingston 99U5584-007.A00LF 4GB

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SK Hynix HMA41GR7MFR4N-TF 8GB

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Kingston ACR16D3LS1NGG/2G 2GB

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SK Hynix HMA42GR7MFR4N-TFTD 16GB

SK Hynix HMA42GR7MFR4N-TFTD 16GB

A-DATA Technology DQKD1A08 1GB

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Kingston 9905403-515.A00LF 8GB

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G Skill Intl F4-3600C16-8GTZNC 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Corsair CMH16GX4M2E3200C16 8GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Wilk Elektronik S.A. IRX3000D464L16/16G 16GB

Wilk Elektronik S.A. IRX3000D464L16/16G 16GB

SK Hynix HMT325S6CFR8C-H9 2GB

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Kingston 9965589-008.D01G 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

G Skill Intl F4-3333C16-4GRRD 4GB

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