Samsung M471B5173QH0-YK0 4GB vs Micron Technology 16ATF2G64HZ-3G2E1 16GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Micron Technology 16ATF2G64HZ-3G2E1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-3G2E1 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 45

左右 -29% 更低的延时
更快的读取速度，GB/s

16.7 12.3

测试中的平均数值
更快的写入速度，GB/s

15.1 8.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 35
读取速度，GB/s

12.3 16.7
写入速度，GB/s

8.0 15.1
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1992 3191

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Golden Empire CL16-18-18 D4-3200 8GB

Golden Empire CL16-18-18 D4-3200 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA851U6CJR6N-VK 4GB

SK Hynix HMA851U6CJR6N-VK 4GB

SK Hynix HMA81GS6DJR8N-VK 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

Kingston 9905458-026.A00LF 4GB

Kingston 9905458-026.A00LF 4GB

SK Hynix HMA41GR7MFR8N-TF 8GB

SK Hynix HMA41GR7MFR8N-TF 8GB

Crucial Technology CT8G4DFS824A.M8FD 8GB

Crucial Technology CT8G4DFS824A.M8FD 8GB

Kingston KHX2400C14S4/8G 8GB

Kingston KHX2400C14S4/8G 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

SK Hynix HMA81GU6DJR8N-XN 8GB

SK Hynix HMA81GU6DJR8N-XN 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Crucial Technology CT8G4DFRA32A.M8FR 8GB

Crucial Technology CT8G4DFRA32A.M8FR 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston 99U5663-006.A00G 16GB

Kingston 99U5663-006.A00G 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Corsair CMK32GX4M1A2400C16 32GB

Corsair CMK32GX4M1A2400C16 32GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Corsair CMK4GX4M1D2400C14 4GB

Corsair CMK4GX4M1D2400C14 4GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

SK Hynix HMT41GS6BFR8A-PB 8GB

SK Hynix HMT41GS6BFR8A-PB 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

A-DATA Technology DDR4 3600 8GB

A-DATA Technology DDR4 3600 8GB