Crucial Technology CT51264BA1339.C16F 4GB vs SK Hynix HMA81GU6DJR8N-XN 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

SK Hynix HMA81GU6DJR8N-XN 8GB

SK Hynix HMA81GU6DJR8N-XN 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

SK Hynix HMA81GU6DJR8N-XN 8GB

需要考虑的原因
SK Hynix HMA81GU6DJR8N-XN 8GB

报告一个错误

更快的读取速度，GB/s

17.2 13.9

测试中的平均数值
更快的写入速度，GB/s

12.9 8.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

SK Hynix HMA81GU6DJR8N-XN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

13.9 17.2
写入速度，GB/s

8.4 12.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2251 3100

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Crucial Technology CT51264BD1339.M16F 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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EVGA 16G-D4-2400-MR 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Apacer Technology 78.C1GMM.DFW0C 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Kingston 9905630-052.A00G 16GB

Kingston 9905630-052.A00G 16GB