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Samsung M471B5173QH0-YK0 4GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB

Samsung M471B5173QH0-YK0 4GB vs Micron Technology 18ADF2G72AZ-2G3B1 16GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
Micron Technology 18ADF2G72AZ-2G3B1 16GB

Micron Technology 18ADF2G72AZ-2G3B1 16GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
Micron Technology 18ADF2G72AZ-2G3B1 16GB 需要考虑的原因
Micron Technology 18ADF2G72AZ-2G3B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 45
    左右 -67% 更低的延时
  • 更快的读取速度，GB/s
    13.7 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.9 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 27
  • 读取速度，GB/s
    12.3 left arrow 13.7
  • 写入速度，GB/s
    8.0 left arrow 9.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 2347

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

Micron Technology 18ADF2G72AZ-2G3B1 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Samsung M471A1K43BB1-CRC 8GB
Samsung M471A1K43BB1-CRC 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Team Group Inc. TEAMGROUP-UD4-2800 8GB
Team Group Inc. TEAMGROUP-UD4-2800 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
内存RAM
Corsair CM5S16GM4800A40K2 16GB
Corsair CM5S16GM4800A40K2 16GB
Corsair CMK8GX4M1A2666C16 8GB
Corsair CMK8GX4M1A2666C16 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Kingston 8ATF1G64HZ-2G3B2 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston XN205T-MIE 16GB
Kingston XN205T-MIE 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3733C17-16GTZSW 16GB
G Skill Intl F4-3733C17-16GTZSW 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
King Tiger Technology Tigo-X3-3200MHz-8G 8GB
King Tiger Technology Tigo-X3-3200MHz-8G 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Corsair CMY32GX3M4B2666C11 8GB
Corsair CMY32GX3M4B2666C11 8GB
内存RAM
SK Hynix HMAA4GS6AJR8N-XN 32GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
内存RAM