Samsung M471B5173QH0-YK0 4GB vs Micron Technology 36ASF2G72LZ-2G1A1 16GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

更快的读取速度，GB/s

12.3 11.4

测试中的平均数值

Micron Technology 36ASF2G72LZ-2G1A1 16GB

需要考虑的原因
Micron Technology 36ASF2G72LZ-2G1A1 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 45

左右 -45% 更低的延时
更快的写入速度，GB/s

8.8 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 31
读取速度，GB/s

12.3 11.4
写入速度，GB/s

8.0 8.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1992 2371

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-4GVRB 4GB

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Apacer Technology GD2.1527CS.001 8GB

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Micron Technology 4ATF51264HZ-3G2J1 4GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Panram International Corporation PUD42133C158G2VS 8GB

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Kingston LV36D4U1S8HD-8XR 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Tanbassh 8G 2666MHZ 8GB

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Kingston 9905678-044.A00G 8GB

Kingston 9905678-044.A00G 8GB

Kingston ACR512X64D3S13C9G 4GB

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G Skill Intl F4-5333C22-8GTRG 8GB

G Skill Intl F4-5333C22-8GTRG 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston KHX426C13/8G 8GB

Kingston KHX426C13/8G 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMT32GX4M2C3600C18 16GB

Corsair CMT32GX4M2C3600C18 16GB