Samsung M471B5173QH0-YK0 4GB vs Neo Forza GKE160SO204808-3200 16GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Neo Forza GKE160SO204808-3200 16GB

Neo Forza GKE160SO204808-3200 16GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

45 63

左右 29% 更低的延时

Neo Forza GKE160SO204808-3200 16GB

需要考虑的原因
Neo Forza GKE160SO204808-3200 16GB

报告一个错误

更快的读取速度，GB/s

14.7 12.3

测试中的平均数值
更快的写入速度，GB/s

12.7 8.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Neo Forza GKE160SO204808-3200 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 63
读取速度，GB/s

12.3 14.7
写入速度，GB/s

8.0 12.7
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1992 2543

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology VDQVE1B16 2GB

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Corsair VS1GB800D2 1GB

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Lexar Co Limited LD4AU016G-H2666G 16GB

Lexar Co Limited LD4AU016G-H2666G 16GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Golden Empire CL18-20-20 D4-3000 8GB

Golden Empire CL18-20-20 D4-3000 8GB

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Kingston 99U5474-010.A00LF 2GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

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