Samsung M471B5173QH0-YK0 4GB vs SK Hynix HMA41GR7MFR8N-TFT1 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

SK Hynix HMA41GR7MFR8N-TFT1 8GB

SK Hynix HMA41GR7MFR8N-TFT1 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

更快的读取速度，GB/s

12.3 10.9

测试中的平均数值

SK Hynix HMA41GR7MFR8N-TFT1 8GB

需要考虑的原因
SK Hynix HMA41GR7MFR8N-TFT1 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 45

左右 -50% 更低的延时
更快的写入速度，GB/s

10.0 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

SK Hynix HMA41GR7MFR8N-TFT1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 30
读取速度，GB/s

12.3 10.9
写入速度，GB/s

8.0 10.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1992 2587

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF1G64HZ-2G2G1 8GB

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Kingston 9905403-156.A00LF 2GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Maxsun MSD48G30M3 8GB

Maxsun MSD48G30M3 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-2133C15-8GFXR 8GB

G Skill Intl F4-2133C15-8GFXR 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Mushkin MRA4S293MMMF32G 32GB

Mushkin MRA4S293MMMF32G 32GB