Samsung M471B5273CH0-CH9 4GB vs A-DATA Technology AO1E34RCSV1-BF1S 16GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

48 57

左右 16% 更低的延时

A-DATA Technology AO1E34RCSV1-BF1S 16GB

需要考虑的原因
A-DATA Technology AO1E34RCSV1-BF1S 16GB

报告一个错误

更快的读取速度，GB/s

16.8 8.9

测试中的平均数值
更快的写入速度，GB/s

13.7 5.9

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 57
读取速度，GB/s

8.9 16.8
写入速度，GB/s

5.9 13.7
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1420 2792

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology GD2.1527WE.001 8GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Corsair CMK8GX4M2B4266C19 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Corsair CMW16GX4M2Z3200C16 8GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston ACR26D4U9S8MH-8 8GB

Kingston ACR26D4U9S8MH-8 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Kingston KHX2800C14D4/4GX 4GB

Kingston KHX2800C14D4/4GX 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB