Samsung M471B5273CH0-CH9 4GB vs Asgard VMA41UG-MEC1U2AW1 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Asgard VMA41UG-MEC1U2AW1 8GB

Asgard VMA41UG-MEC1U2AW1 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

48 71

左右 32% 更低的延时

Asgard VMA41UG-MEC1U2AW1 8GB

需要考虑的原因
Asgard VMA41UG-MEC1U2AW1 8GB

报告一个错误

更快的读取速度，GB/s

14.8 8.9

测试中的平均数值
更快的写入速度，GB/s

7.7 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Asgard VMA41UG-MEC1U2AW1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 71
读取速度，GB/s

8.9 14.8
写入速度，GB/s

5.9 7.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1420 1866

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.C1GMS.C7Z0C 8GB

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Mushkin 99[2/7/4]199F 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Mushkin MR[A/B]280HHHH16G 16GB

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Corsair CM4B4G1J2400A14K 4GB

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Kingston K531R8-MIN 4GB

Kingston KF2666C15S4/16G 16GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Kingston 9905702-204.A00G 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

SK Hynix HMAA4GU6AJR8N-XN 32GB

SK Hynix HMAA4GU6AJR8N-XN 32GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston 9905702-002.A00G 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

G Skill Intl F4-2133C15-8GFXR 8GB

G Skill Intl F4-2133C15-8GFXR 8GB