Samsung M471B5273CH0-CH9 4GB vs Chun Well Technology Holding Limited MD4U1636181DCW 16GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

需要考虑的原因
Chun Well Technology Holding Limited MD4U1636181DCW 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 48

左右 -71% 更低的延时
更快的读取速度，GB/s

18.1 8.9

测试中的平均数值
更快的写入速度，GB/s

15.6 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 28
读取速度，GB/s

8.9 18.1
写入速度，GB/s

5.9 15.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1420 3693

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMT64GX4M4Z3600C18 16GB

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Kingston ACR16D3LS1KBG/8G 8GB

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PUSKILL DDR3 1600 8G 8GB

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Kingston 9905458-017.A01LF 4GB

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Corsair CMV16GX4M1A2666C18 16GB

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Transcend Information JM2666HSB-16G 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Kingston ACR32D4U2S1ME-8 8GB

Kingston ACR32D4U2S1ME-8 8GB

Kingston 99U5701-036.A00G 16GB

Kingston 99U5701-036.A00G 16GB

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Crucial Technology CT8G4SFD8213.C16FHP 8GB

Crucial Technology CT8G4SFD8213.C16FHP 8GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N