Samsung M471B5273CH0-CH9 4GB vs Corsair CMWB8G1L3200K16W4 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Corsair CMWB8G1L3200K16W4 8GB

Corsair CMWB8G1L3200K16W4 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Corsair CMWB8G1L3200K16W4 8GB

需要考虑的原因
Corsair CMWB8G1L3200K16W4 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 48

左右 -85% 更低的延时
更快的读取速度，GB/s

18.9 8.9

测试中的平均数值
更快的写入速度，GB/s

17.3 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Corsair CMWB8G1L3200K16W4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 26
读取速度，GB/s

8.9 18.9
写入速度，GB/s

5.9 17.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1420 3983

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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Samsung M471A4G43AB1-CWE 32GB

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Samsung M471B5773DH0-CH9 2GB

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB

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Samsung M395T2863QZ4-CF76 1GB

Crucial Technology BL16G30C15U4W.M16FE1 16GB

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Kingston 9905630-025.A00G 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB