Samsung M471B5273CH0-CH9 4GB vs Crucial Technology BLT4G4D26AFTA.8FADG 4GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

需要考虑的原因
Crucial Technology BLT4G4D26AFTA.8FADG 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 48

左右 -109% 更低的延时
更快的读取速度，GB/s

16.5 8.9

测试中的平均数值
更快的写入速度，GB/s

12.6 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 23
读取速度，GB/s

8.9 16.5
写入速度，GB/s

5.9 12.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1420 2755

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-2800C16-8GVR 8GB

G Skill Intl F4-2800C16-8GVR 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

G Skill Intl F4-3400C16-8GTZSW 8GB

G Skill Intl F4-3400C16-8GTZSW 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

G Skill Intl F4-3600C18-32GTRS 32GB

G Skill Intl F4-3600C18-32GTRS 32GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Mushkin 991586 2GB

Mushkin 991586 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Wilk Elektronik S.A. GR2666D464L19/16GN 16GB

Wilk Elektronik S.A. GR2666D464L19/16GN 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Essencore Limited KD4AGU880-32A160U 16GB

Essencore Limited KD4AGU880-32A160U 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

SK Hynix HMA81GS6CJR8N-XN 8GB

SK Hynix HMA81GS6CJR8N-XN 8GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Gloway International (HK) STK2400C15-16GB 16GB

Gloway International (HK) STK2400C15-16GB 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Micron Technology AFLD44EK2P 4GB

Micron Technology AFLD44EK2P 4GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Kingston ACR26D4S9D8ME-16 16GB

Kingston ACR26D4S9D8ME-16 16GB