Samsung M471B5273CH0-CH9 4GB vs Crucial Technology CT4G4DFS824A.M8FB 4GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Crucial Technology CT4G4DFS824A.M8FB 4GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Crucial Technology CT4G4DFS824A.M8FB 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.M8FB 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 48

左右 -118% 更低的延时
更快的读取速度，GB/s

17 8.9

测试中的平均数值
更快的写入速度，GB/s

12.2 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 22
读取速度，GB/s

8.9 17.0
写入速度，GB/s

5.9 12.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1420 2646

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Team Group Inc. Team-Elite-2400 4GB

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Kingston 9905471-006.A00LF 4GB

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Chun Well Technology Holding Limited CL16-20-20 D4-3200

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

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Crucial Technology CT8G4SFD824AC16FBD1 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Crucial Technology BLS16G4D240FSC.16FD 16GB

Crucial Technology BLS16G4D240FSC.16FD 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Kingston 9965640-001.C00G 16GB

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SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Corsair CMSO16GX4M1A2133C15 16GB

Corsair CMSO16GX4M1A2133C15 16GB