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Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB

Samsung M471B5273CH0-CH9 4GB vs Crucial Technology CT8G4SFS8266.C8FD1 8GB

总分
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分
star star star star star
Crucial Technology CT8G4SFS8266.C8FD1 8GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB

差异 规格 评论

差异

Samsung M471B5273CH0-CH9 4GB 需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
Crucial Technology CT8G4SFS8266.C8FD1 8GB 需要考虑的原因
Crucial Technology CT8G4SFS8266.C8FD1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 48
    左右 -37% 更低的延时
  • 更快的读取速度，GB/s
    16.4 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 35
  • 读取速度，GB/s
    8.9 left arrow 16.4
  • 写入速度，GB/s
    5.9 left arrow 10.8
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1420 left arrow 2660

Samsung M471B5273CH0-CH9 4GB RAM的比较

G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMT32GX4M4K4000C19 8GB
Corsair CMT32GX4M4K4000C19 8GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Samsung M471A2K43CB1-CTCT 16GB
Samsung M471A2K43CB1-CTCT 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF2G64HZ-3G2B2 16GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Team Group Inc. TEAMGROUP-Ind-2666 8GB
Team Group Inc. TEAMGROUP-Ind-2666 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMW16GX4M2C3200C14 8GB
Corsair CMW16GX4M2C3200C14 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMD64GX4M8B3200C16 8GB
Corsair CMD64GX4M8B3200C16 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HMA81GU6AFR8N-UH 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
Corsair CM4B8G4J2400A16K2-ON 8GB
Corsair CM4B8G4J2400A16K2-ON 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS16G4D30CEST.16FD 16GB
Crucial Technology BLS16G4D30CEST.16FD 16GB
内存RAM