Samsung M471B5273CH0-CH9 4GB vs G Skill Intl F4-2400C16-4GRS 4GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

G Skill Intl F4-2400C16-4GRS 4GB

G Skill Intl F4-2400C16-4GRS 4GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

G Skill Intl F4-2400C16-4GRS 4GB

需要考虑的原因
G Skill Intl F4-2400C16-4GRS 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 48

左右 -109% 更低的延时
更快的读取速度，GB/s

16.6 8.9

测试中的平均数值
更快的写入速度，GB/s

12.6 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-2400C16-4GRS 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 23
读取速度，GB/s

8.9 16.6
写入速度，GB/s

5.9 12.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1420 2561

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston 99U5474-013.A00LF 2GB

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Mushkin 99[2/7/4]191F 4GB

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Corsair CMSO32GX4M2A2133C15 16GB

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Samsung M471B5273CH0-CH9 4GB

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G Skill Intl F4-2400C16-4GRS 4GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Kllisre 99P54280002.A00LF 8GB

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Corsair CMK32GX4M2F4000C19 16GB

Corsair CMK32GX4M2F4000C19 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Corsair CMD16GX4M2B3466C16 8GB

Corsair CMD16GX4M2B3466C16 8GB

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Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMD8GX4M2B3000C15 4GB

Corsair CMD8GX4M2B3000C15 4GB