Samsung M471B5273CH0-CH9 4GB vs G Skill Intl F4-4000C18-16GTRS 16GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

G Skill Intl F4-4000C18-16GTRS 16GB

G Skill Intl F4-4000C18-16GTRS 16GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

G Skill Intl F4-4000C18-16GTRS 16GB

需要考虑的原因
G Skill Intl F4-4000C18-16GTRS 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 48

左右 -66% 更低的延时
更快的读取速度，GB/s

20.8 8.9

测试中的平均数值
更快的写入速度，GB/s

16.9 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-4000C18-16GTRS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 29
读取速度，GB/s

8.9 20.8
写入速度，GB/s

5.9 16.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1420 3901

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-090.A01LF 4GB

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Corsair CMR64GX4M8C3000C15 8GB

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Crucial Technology BL16G26C16U4W.16FE 16GB

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Corsair CML8GX3M2A1600C9 4GB

Panram International Corporation W4U3200PS-16G 16GB

Panram International Corporation W4U3200PS-16G 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

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Micron Technology 16ATF2G64AZ-2G3H1 16GB

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Kingston KHX1600C9D3/8G 8GB

Corsair CMK32GX4M1A2666C16 32GB

Corsair CMK32GX4M1A2666C16 32GB