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Samsung M471B5273CH0-CH9 4GB
Golden Empire CL16-18-18 D4-3200 8GB

Samsung M471B5273CH0-CH9 4GB vs Golden Empire CL16-18-18 D4-3200 8GB

总分
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分
star star star star star
Golden Empire CL16-18-18 D4-3200 8GB

Golden Empire CL16-18-18 D4-3200 8GB

差异 规格 评论

差异

Samsung M471B5273CH0-CH9 4GB 需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
Golden Empire CL16-18-18 D4-3200 8GB 需要考虑的原因
Golden Empire CL16-18-18 D4-3200 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 48
    左右 -71% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.2 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273CH0-CH9 4GB
Golden Empire CL16-18-18 D4-3200 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 28
  • 读取速度，GB/s
    8.9 left arrow 18.2
  • 写入速度，GB/s
    5.9 left arrow 14.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1420 left arrow 3463

Samsung M471B5273CH0-CH9 4GB RAM的比较

G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

Golden Empire CL16-18-18 D4-3200 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Asgard VMA45UG-MEC1U2AW1 8GB
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内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
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ASint Technology SSA302G08-EGN1C 4GB
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Kingston 99U5428-040.A00LF 4GB
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内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
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内存RAM
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Kingston 9905403-134.A00LF 2GB
SK Hynix HMA81GS6AFR8N-UH 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
内存RAM
Kingston 99U5428-046.A00LF 4GB
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Corsair CMK16GX4M2B3200C14 8GB
Corsair CMK16GX4M2B3200C14 8GB
内存RAM
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Crucial Technology BLT2G3D1608DT1TX0 2GB
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Crucial Technology CT8G4SFD8213.C16FBR2 8GB
内存RAM
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SK Hynix HMT451S6BFR8A-PB 4GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMT16GX4M2C3466C16 8GB
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内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
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Hewlett-Packard 48U45AA# 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
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Crucial Technology BL8G32C16S4B.8FE 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston KGTWW1-MIE 4GB
Kingston KGTWW1-MIE 4GB
内存RAM