Samsung M471B5273CH0-CH9 4GB vs Kingston MSI24D4U7S8MH-8 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Kingston MSI24D4U7S8MH-8 8GB

Kingston MSI24D4U7S8MH-8 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Kingston MSI24D4U7S8MH-8 8GB

需要考虑的原因
Kingston MSI24D4U7S8MH-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 48

左右 -60% 更低的延时
更快的读取速度，GB/s

16.6 8.9

测试中的平均数值
更快的写入速度，GB/s

11.8 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Kingston MSI24D4U7S8MH-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 30
读取速度，GB/s

8.9 16.6
写入速度，GB/s

5.9 11.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1420 2945

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Kingston MSI24D4U7S8MH-8 8GB

Kingston MSI24D4U7S8MH-8 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Corsair CMG32GX4M2D3600C18 16GB

Corsair CMG32GX4M2D3600C18 16GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

Corsair CM4X16GD3200C16K4E 16GB

Corsair CM4X16GD3200C16K4E 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BLS16G4D32AESB.M16FE 16GB

Crucial Technology BLS16G4D32AESB.M16FE 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3866C18-8GTZKW 8GB

G Skill Intl F4-3866C18-8GTZKW 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston MSI24D4S7S8S8-8 8GB

Kingston MSI24D4S7S8S8-8 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Team Group Inc. DDR4 3600 8GB

Team Group Inc. DDR4 3600 8GB

Crucial Technology CT51264BC160B.M16F 4GB

Crucial Technology CT51264BC160B.M16F 4GB

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-3333C16-16GVR 16GB

G Skill Intl F4-3333C16-16GVR 16GB