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Samsung M471B5273CH0-CH9 4GB
SK Hynix HMA851S6DJR6N-XN 4GB

Samsung M471B5273CH0-CH9 4GB vs SK Hynix HMA851S6DJR6N-XN 4GB

总分
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分
star star star star star
SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

差异 规格 评论

差异

Samsung M471B5273CH0-CH9 4GB 需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
SK Hynix HMA851S6DJR6N-XN 4GB 需要考虑的原因
SK Hynix HMA851S6DJR6N-XN 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    44 left arrow 48
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    14.9 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273CH0-CH9 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 44
  • 读取速度，GB/s
    8.9 left arrow 14.9
  • 写入速度，GB/s
    5.9 left arrow 11.6
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1420 left arrow 2191

Samsung M471B5273CH0-CH9 4GB RAM的比较

G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

SK Hynix HMA851S6DJR6N-XN 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
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Kingston 9905678-121.A00G 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3000C14-8GTZ 8GB
G Skill Intl F4-3000C14-8GTZ 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3600C19-16GTRG 16GB
G Skill Intl F4-3600C19-16GTRG 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston MSI24D4U7S8MB-8 8GB
Kingston MSI24D4U7S8MB-8 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Corsair CMK8GX4M1A2666C16 8GB
Corsair CMK8GX4M1A2666C16 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMR16GX4M2C3466C16 8GB
Corsair CMR16GX4M2C3466C16 8GB
内存RAM
Kingston 9905403-02X.A00LF 8GB
Kingston 9905403-02X.A00LF 8GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Smart Modular SF464128CKHIWDFSEG 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology CT32G4SFD832A.M16FB 32GB
Crucial Technology CT32G4SFD832A.M16FB 32GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMT16GX4M2K3600C16 8GB
Corsair CMT16GX4M2K3600C16 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-2400C15-16GIS 16GB
G Skill Intl F4-2400C15-16GIS 16GB
内存RAM