Samsung M471B5273DH0-CH9 4GB vs Corsair CMK32GX4M4K4266C19 8GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

Corsair CMK32GX4M4K4266C19 8GB

Corsair CMK32GX4M4K4266C19 8GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

Corsair CMK32GX4M4K4266C19 8GB

需要考虑的原因
Corsair CMK32GX4M4K4266C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 47

左右 -124% 更低的延时
更快的读取速度，GB/s

21.2 9.3

测试中的平均数值
更快的写入速度，GB/s

19.1 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

Corsair CMK32GX4M4K4266C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 21
读取速度，GB/s

9.3 21.2
写入速度，GB/s

5.9 19.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1413 4404

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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SK Hynix HMT351S6CFR8C-PB 4GB

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Elpida EBE21UE8ACUA-8G-E 2GB

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Qimonda 72T128420EFA3SB2 1GB

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AMD R744G2400U1S-UO 4GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Kingston 9905701-032.A00G 16GB

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AMD AE34G1601U1 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Apacer Technology 76.B305G.D500B 4GB

Apacer Technology 76.B305G.D500B 4GB