RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
比较
Samsung M471B5273DH0-CH9 4GB vs Crucial Technology BLS16G4D32AESC.M16FE 16GB
总分
Samsung M471B5273DH0-CH9 4GB
总分
Crucial Technology BLS16G4D32AESC.M16FE 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5273DH0-CH9 4GB
报告一个错误
需要考虑的原因
Crucial Technology BLS16G4D32AESC.M16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
47
左右 -62% 更低的延时
更快的读取速度,GB/s
18.1
9.3
测试中的平均数值
更快的写入速度,GB/s
14.9
5.9
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
47
29
读取速度,GB/s
9.3
18.1
写入速度,GB/s
5.9
14.9
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1413
3673
Samsung M471B5273DH0-CH9 4GB RAM的比较
Kingston TSB16D3LS1KBG/4G 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston MSI26D4S9D8ME-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5584-005.A00LF 4GB
Transcend Information JM2666HLG-16GK 8GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
Kingston 9965433-034.A00LF 4GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
Kingston KHX2400C11D3/4GX 4GB
Kingston 9905702-006.A00G 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston KHX2933C17D4/8G 8GB
Samsung M393B1G70BH0-CK0 8GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3600C17-8GTZ 8GB
Samsung M393B2G70BH0-CH9 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Samsung M393B5270CH0-CH9 4GB
Avant Technology W641GU67J5213N8 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMSX32GX4M1A2666C18 32GB
Ramos Technology EWB8GB681CA3-16IC 8GB
InnoDisk Corporation 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
AMD R534G1601U1S-UO 4GB
SK Hynix HMT451U6MFR8C-PB 4GB
报告一个错误
×
Bug description
Source link