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Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-4600C18-8GTZR 8GB

Samsung M471B5273DH0-CH9 4GB vs G Skill Intl F4-4600C18-8GTZR 8GB

总分
star star star star star
Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分
star star star star star
G Skill Intl F4-4600C18-8GTZR 8GB

G Skill Intl F4-4600C18-8GTZR 8GB

差异 规格 评论

差异

Samsung M471B5273DH0-CH9 4GB 需要考虑的原因
Samsung M471B5273DH0-CH9 4GB
报告一个错误
G Skill Intl F4-4600C18-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-4600C18-8GTZR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 47
    左右 -114% 更低的延时
  • 更快的读取速度，GB/s
    19.3 left arrow 9.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.3 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-4600C18-8GTZR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 22
  • 读取速度，GB/s
    9.3 left arrow 19.3
  • 写入速度，GB/s
    5.9 left arrow 17.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1413 left arrow 3653

Samsung M471B5273DH0-CH9 4GB RAM的比较

Kingston TSB16D3LS1KBG/4G 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB

G Skill Intl F4-4600C18-8GTZR 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-4600C18-8GTZR 8GB
G Skill Intl F4-4600C18-8GTZR 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Lenovo 16GB
Lenovo 16GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Crucial Technology CT8G4DFD8213.C16FBD1 8GB
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内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Essencore Limited IM48GU48N28-GGGHM 8GB
Essencore Limited IM48GU48N28-GGGHM 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Shenzhen Technology Co Ltd 8GB
Shenzhen Technology Co Ltd 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Essencore Limited KD48GS88A-26N1600 8GB
Essencore Limited KD48GS88A-26N1600 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Apacer Technology AQD-D4U8GN26-SE 8GB
Apacer Technology AQD-D4U8GN26-SE 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Mushkin 99[2/7/4]192F 4GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Kingston 9905598-009.A00G 8GB
Kingston 9905598-009.A00G 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-4400C17-16GVK 16GB
G Skill Intl F4-4400C17-16GVK 16GB
内存RAM