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Samsung M471B5273DH0-CH9 4GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

Samsung M471B5273DH0-CH9 4GB vs SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

总分
star star star star star
Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分
star star star star star
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

差异 规格 评论

差异

Samsung M471B5273DH0-CH9 4GB 需要考虑的原因
Samsung M471B5273DH0-CH9 4GB
报告一个错误
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB 需要考虑的原因
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 47
    左右 -68% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 9.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.1 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    23400 left arrow 10600
    左右 2.21 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CH9 4GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 28
  • 读取速度，GB/s
    9.3 left arrow 17.5
  • 写入速度，GB/s
    5.9 left arrow 16.1
  • 内存带宽，mbps
    10600 left arrow 23400
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • 排名PassMark (越多越好)
    1413 left arrow 3758

Samsung M471B5273DH0-CH9 4GB RAM的比较

Kingston TSB16D3LS1KBG/4G 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
内存RAM
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G Skill Intl F4-3200C14-16GFX 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Apacer Technology GD2.1527WC.001 8GB
Apacer Technology GD2.1527WC.001 8GB
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Samsung M393B1K70CH0-CH9 8GB
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内存RAM
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Samsung M378B5673FH0-CH9 2GB
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Kingston 9905403-038.A00LF 4GB
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Kingston 9905403-515.A00LF 8GB
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G Skill Intl F4-2400C16-8GRS 8GB
内存RAM
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AMD R534G1601U1S-UO 4GB
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G Skill Intl F4-2800C15-4GTZ 4GB
内存RAM
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takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3466C16-8GTZ 8GB
G Skill Intl F4-3466C16-8GTZ 8GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3200C14-8GTRS 8GB
G Skill Intl F4-3200C14-8GTRS 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-2800C17-8GVR 8GB
G Skill Intl F4-2800C17-8GVR 8GB
内存RAM