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Samsung M471B5273DH0-CH9 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB

Samsung M471B5273DH0-CH9 4GB vs SK Hynix V-GeN D4H4GL30A8TX5 4GB

总分
star star star star star
Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分
star star star star star
SK Hynix V-GeN D4H4GL30A8TX5 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

差异 规格 评论

差异

Samsung M471B5273DH0-CH9 4GB 需要考虑的原因
Samsung M471B5273DH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    47 left arrow 73
    左右 36% 更低的延时
SK Hynix V-GeN D4H4GL30A8TX5 4GB 需要考虑的原因
SK Hynix V-GeN D4H4GL30A8TX5 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 9.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CH9 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 73
  • 读取速度，GB/s
    9.3 left arrow 15.8
  • 写入速度，GB/s
    5.9 left arrow 8.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1413 left arrow 1822

Samsung M471B5273DH0-CH9 4GB RAM的比较

Kingston TSB16D3LS1KBG/4G 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston KVR26N19D8/16 16GB
Kingston KVR26N19D8/16 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMH128GX4M4E3200C16 32GB
Corsair CMH128GX4M4E3200C16 32GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Golden Empire CL18-20-20 D4-3000 8GB
Golden Empire CL18-20-20 D4-3000 8GB
内存RAM
Crucial Technology RM51264BA1339.16FR 4GB
Crucial Technology RM51264BA1339.16FR 4GB
Apacer Technology 78.CAGPW.40C0B 8GB
Apacer Technology 78.CAGPW.40C0B 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
内存RAM
SK Hynix HMT42GR7MFR4A-PB 16GB
SK Hynix HMT42GR7MFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
内存RAM
Corsair CMK32GX4M2A2666C16 16GB
Corsair CMK32GX4M2A2666C16 16GB
Corsair CMK32GX4M2Z3600C18 16GB
Corsair CMK32GX4M2Z3600C18 16GB
内存RAM