Samsung M471B5273DH0-CK0 4GB vs Corsair CMR128GX4M8Z2933C16 16GB

总分

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分

Corsair CMR128GX4M8Z2933C16 16GB

Corsair CMR128GX4M8Z2933C16 16GB

差异规格评论

差异

Samsung M471B5273DH0-CK0 4GB

需要考虑的原因
Samsung M471B5273DH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

41 78

左右 47% 更低的延时

Corsair CMR128GX4M8Z2933C16 16GB

需要考虑的原因
Corsair CMR128GX4M8Z2933C16 16GB

报告一个错误

更快的读取速度，GB/s

14.2 13.3

测试中的平均数值
更快的写入速度，GB/s

11.5 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CK0 4GB

Corsair CMR128GX4M8Z2933C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 78
读取速度，GB/s

13.3 14.2
写入速度，GB/s

9.0 11.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2016 2087

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Teikon TMA851U6AFR6N-UHHC 4GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Hewlett-Packard 7EH55AA# 8GB

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Crucial Technology BLS8G4D32AESEK.M8FE 8GB

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Samsung M471B5273EB0-CK0 4GB

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Samsung M471B5273DH0-CK0 4GB

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Corsair CMR128GX4M8Z2933C16 16GB

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Kingston KP4T2F-PSB 4GB

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G Skill Intl F4-2400C15-8GNT 8GB

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SK Hynix HMAA2GS6AJR8N-XN 16GB

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Mushkin 99[2/7/4]208F 8GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Corsair CMU16GX4M2C3200C16 8GB

Corsair CMU16GX4M2C3200C16 8GB

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Corsair CM2X1024-8500C5D 1GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB