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Samsung M471B5273DH0-CK0 4GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB

Samsung M471B5273DH0-CK0 4GB vs Crucial Technology CT4G4DFS8213.C8FAR1 4GB

总分
star star star star star
Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分
star star star star star
Crucial Technology CT4G4DFS8213.C8FAR1 4GB

Crucial Technology CT4G4DFS8213.C8FAR1 4GB

差异 规格 评论

差异

Samsung M471B5273DH0-CK0 4GB 需要考虑的原因
Samsung M471B5273DH0-CK0 4GB
报告一个错误
Crucial Technology CT4G4DFS8213.C8FAR1 4GB 需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 41
    左右 -14% 更低的延时
  • 更快的读取速度，GB/s
    13.4 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CK0 4GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 36
  • 读取速度，GB/s
    13.3 left arrow 13.4
  • 写入速度，GB/s
    9.0 left arrow 10.6
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2016 left arrow 2734

Samsung M471B5273DH0-CK0 4GB RAM的比较

Corsair CMD8GX3M2A2933C12 4GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB

Crucial Technology CT4G4DFS8213.C8FAR1 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Kingston 9905701-098.A00G 16GB
Kingston 9905701-098.A00G 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905744-076.A00G 16GB
Kingston 9905744-076.A00G 16GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMT451B6AFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451B6AFR8A
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMG16GX4M2E3200C16 8GB
Corsair CMG16GX4M2E3200C16 8GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Shenzen Recadata Storage Technology 8GB
Shenzen Recadata Storage Technology 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4266C19-8GTZR 8GB
G Skill Intl F4-4266C19-8GTZR 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Corsair CM4X16GE2400C16S4 16GB
Corsair CM4X16GE2400C16S4 16GB
内存RAM