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Samsung M471B5273DH0-CK0 4GB
Mushkin MR[A/B]280HHHH16G 16GB

Samsung M471B5273DH0-CK0 4GB vs Mushkin MR[A/B]280HHHH16G 16GB

总分
star star star star star
Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分
star star star star star
Mushkin MR[A/B]280HHHH16G 16GB

Mushkin MR[A/B]280HHHH16G 16GB

差异 规格 评论

差异

Samsung M471B5273DH0-CK0 4GB 需要考虑的原因
Samsung M471B5273DH0-CK0 4GB
报告一个错误
Mushkin MR[A/B]280HHHH16G 16GB 需要考虑的原因
Mushkin MR[A/B]280HHHH16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 41
    左右 -86% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.4 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CK0 4GB
Mushkin MR[A/B]280HHHH16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 22
  • 读取速度，GB/s
    13.3 left arrow 18.4
  • 写入速度，GB/s
    9.0 left arrow 14.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2016 left arrow 3394

Samsung M471B5273DH0-CK0 4GB RAM的比较

Corsair CMD8GX3M2A2933C12 4GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB

Mushkin MR[A/B]280HHHH16G 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
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内存RAM
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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Crucial Technology CT4G4SFS624A.C4FB 4GB
内存RAM
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内存RAM
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Kingston 9905702-006.A00G 8GB
内存RAM
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Crucial Technology CT16G4SFRA266.M16FRS 16GB
内存RAM
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SK Hynix HYMP112U64CP8-Y5 1GB
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G Skill Intl F4-3000C15-8GTZ 8GB
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