Samsung M471B5273DH0-CK0 4GB vs Samsung M386A8K40BMB-CPB 64GB

总分

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分

Samsung M386A8K40BMB-CPB 64GB

Samsung M386A8K40BMB-CPB 64GB

差异规格评论

差异

Samsung M471B5273DH0-CK0 4GB

需要考虑的原因
Samsung M471B5273DH0-CK0 4GB

报告一个错误

更快的读取速度，GB/s

13.3 9.1

测试中的平均数值
更快的写入速度，GB/s

9.0 8.3

测试中的平均数值

Samsung M386A8K40BMB-CPB 64GB

需要考虑的原因
Samsung M386A8K40BMB-CPB 64GB

报告一个错误

低于PassMark测试中的延时，ns

35 41

左右 -17% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CK0 4GB

Samsung M386A8K40BMB-CPB 64GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 35
读取速度，GB/s

13.3 9.1
写入速度，GB/s

9.0 8.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2016 2229

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905665-009.A00G 4GB

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Good Wealth Technology Ltd. 8GB

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Corsair CMD8GX3M2A2800C12 4GB

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Team Group Inc. TEAMGROUP-UD4-3866 8GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Corsair CMW16GX4M1Z3600C18 16GB

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Kingston 99U5584-005.A00LF 4GB

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Corsair CMD16GX4M4C3200C15 4GB

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Apacer Technology 78.01G86.9H50C 1GB

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Samsung M391B5673EH1-CH9 2GB

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Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266

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Samsung M378A2G43MX3-CTD 16GB

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Kingston 99U5474-013.A00LF 2GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB