Samsung M471B5273DH0-YK0 4GB vs Corsair CMW32GX4M2D3000C16 16GB

总分

Samsung M471B5273DH0-YK0 4GB

Samsung M471B5273DH0-YK0 4GB

总分

Corsair CMW32GX4M2D3000C16 16GB

Corsair CMW32GX4M2D3000C16 16GB

差异规格评论

差异

Samsung M471B5273DH0-YK0 4GB

需要考虑的原因
Samsung M471B5273DH0-YK0 4GB

报告一个错误

Corsair CMW32GX4M2D3000C16 16GB

需要考虑的原因
Corsair CMW32GX4M2D3000C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 41

左右 -32% 更低的延时
更快的读取速度，GB/s

18.3 12.9

测试中的平均数值
更快的写入速度，GB/s

13.7 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-YK0 4GB

Corsair CMW32GX4M2D3000C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 31
读取速度，GB/s

12.9 18.3
写入速度，GB/s

9.0 13.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1958 3433

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP512U64CP8-Y5 1GB

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A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

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Samsung M378A1K43CB2-CRC 8GB

Kingston 99U5471-012.A00LF 4GB

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SK Hynix HMAA1GU6CJR6N-XN 8GB

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OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

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Corsair CMW16GX4M1Z3200C16 16GB

Corsair CMW16GX4M1Z3200C16 16GB