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Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston CBD26D4U9S8ME-8 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs Kingston CBD26D4U9S8ME-8 8GB

总分
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分
star star star star star
Kingston CBD26D4U9S8ME-8 8GB

Kingston CBD26D4U9S8ME-8 8GB

差异 规格 评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.8 left arrow 16.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Kingston CBD26D4U9S8ME-8 8GB 需要考虑的原因
Kingston CBD26D4U9S8ME-8 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 33
    左右 -3% 更低的延时

规格

完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston CBD26D4U9S8ME-8 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 32
  • 读取速度，GB/s
    17.8 left arrow 16.2
  • 写入速度，GB/s
    12.5 left arrow 12.5
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3285 left arrow 3148

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB

Kingston CBD26D4U9S8ME-8 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT16G4DFD824A.C16FHD 16GB
Crucial Technology CT16G4DFD824A.C16FHD 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMT32GX4M2D3600C18 16GB
Corsair CMT32GX4M2D3600C18 16GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Micron Technology ILG8GS2400A 8GB
Micron Technology ILG8GS2400A 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston 99U5713-003.A00G 4GB
Kingston 99U5713-003.A00G 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Apacer Technology 78.D2GF2.AU30B 16GB
Apacer Technology 78.D2GF2.AU30B 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Essencore Limited IM48GU88N26-GIIHMB 8GB
Essencore Limited IM48GU88N26-GIIHMB 8GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
SK Hynix HMA82GR7AFR8N-VK 16GB
SK Hynix HMA82GR7AFR8N-VK 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Samsung M378A5143TB2-CTD 4GB
Samsung M378A5143TB2-CTD 4GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Panram International Corporation D4N2400PS-8G 8GB
Panram International Corporation D4N2400PS-8G 8GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
Essencore Limited IM44GU48N21-FFFHM 4GB
Essencore Limited IM44GU48N21-FFFHM 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
内存RAM