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Samsung M471B5273EB0-CK0 4GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB

Samsung M471B5273EB0-CK0 4GB vs A-DATA Technology AO1P24HC4N2-BWCS 4GB

总分
star star star star star
Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分
star star star star star
A-DATA Technology AO1P24HC4N2-BWCS 4GB

A-DATA Technology AO1P24HC4N2-BWCS 4GB

差异 规格 评论

差异

Samsung M471B5273EB0-CK0 4GB 需要考虑的原因
Samsung M471B5273EB0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 126
    左右 68% 更低的延时
  • 更快的写入速度，GB/s
    8.9 left arrow 6.5
    测试中的平均数值
A-DATA Technology AO1P24HC4N2-BWCS 4GB 需要考虑的原因
A-DATA Technology AO1P24HC4N2-BWCS 4GB
报告一个错误
  • 更快的读取速度，GB/s
    12.9 left arrow 12.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273EB0-CK0 4GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 126
  • 读取速度，GB/s
    12.3 left arrow 12.9
  • 写入速度，GB/s
    8.9 left arrow 6.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1789 left arrow 1108

Samsung M471B5273EB0-CK0 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB

A-DATA Technology AO1P24HC4N2-BWCS 4GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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内存RAM
Samsung M471B5273EB0-CK0 4GB
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A-DATA Technology AO1P24HC4N2-BWCS 4GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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Samsung M471B5673FH0-CF8 2GB
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