Samsung M471B5273EB0-CK0 4GB vs Avant Technology J642GU42J7240NF 16GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Avant Technology J642GU42J7240NF 16GB

Avant Technology J642GU42J7240NF 16GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 101

左右 60% 更低的延时
更快的写入速度，GB/s

8.9 8.7

测试中的平均数值

Avant Technology J642GU42J7240NF 16GB

需要考虑的原因
Avant Technology J642GU42J7240NF 16GB

报告一个错误

更快的读取速度，GB/s

15.7 12.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Avant Technology J642GU42J7240NF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 101
读取速度，GB/s

12.3 15.7
写入速度，GB/s

8.9 8.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1789 1666

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DQKD1A08 1GB

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Lexar Co Limited LD4AS008G-H2666GST 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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SK Hynix HMA42GR7AFR4N-UH 16GB

SK Hynix HMA42GR7AFR4N-UH 16GB

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Samsung M471B5273EB0-CK0 4GB

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Kingston 99U5403-083.A00LF 8GB

Crucial Technology CT16G4S24AM.M16FE 16GB

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Ramaxel Technology RMT3010EC58E8F1333 2GB

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Crucial Technology BLM16G40C18U4B.M8FB1 16GB

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Kingston 99U5474-038.A00LF 4GB

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Transcend Information TS1GLH64V1H 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Crucial Technology CT8G4DFS8213.C8FDR1 8GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB