Samsung M471B5273EB0-CK0 4GB vs Avant Technology J642GU42J9266NF 16GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Avant Technology J642GU42J9266NF 16GB

Avant Technology J642GU42J9266NF 16GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Avant Technology J642GU42J9266NF 16GB

需要考虑的原因
Avant Technology J642GU42J9266NF 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 40

左右 -14% 更低的延时
更快的读取速度，GB/s

15.4 12.3

测试中的平均数值
更快的写入速度，GB/s

11.9 8.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Avant Technology J642GU42J9266NF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 35
读取速度，GB/s

12.3 15.4
写入速度，GB/s

8.9 11.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1789 2865

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M1C3000C16 16GB

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G Skill Intl F4-4000C15-8GTZR 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Kingston ACR26D4S9S8ME-8 8GB

TwinMOS 8DPT5MK8-TATP 2GB

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Corsair CMX8GX3M2A1600C11 4GB

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Mushkin 99[2/7/4]199[F/T] 8GB

Mushkin 99[2/7/4]199[F/T] 8GB