Samsung M471B5273EB0-CK0 4GB vs Corsair CMD16GX4M4B2133C10 4GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Corsair CMD16GX4M4B2133C10 4GB

Corsair CMD16GX4M4B2133C10 4GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Corsair CMD16GX4M4B2133C10 4GB

需要考虑的原因
Corsair CMD16GX4M4B2133C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 40

左右 -67% 更低的延时
更快的读取速度，GB/s

15.8 12.3

测试中的平均数值
更快的写入速度，GB/s

11.7 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Corsair CMD16GX4M4B2133C10 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 24
读取速度，GB/s

12.3 15.8
写入速度，GB/s

8.9 11.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1789 2971

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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EXCELERAM D48G8G8H8SS9CJRB22 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

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Kingston 9905403-444.A00LF 4GB

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Crucial Technology CT4G4DFS8213.8FA11 4GB

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AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

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Crucial Technology CT8G4SFS824A.M8FD 8GB