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Samsung M471B5273EB0-CK0 4GB
Corsair CMK32GX4M2C3333C16 16GB

Samsung M471B5273EB0-CK0 4GB vs Corsair CMK32GX4M2C3333C16 16GB

总分
star star star star star
Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分
star star star star star
Corsair CMK32GX4M2C3333C16 16GB

Corsair CMK32GX4M2C3333C16 16GB

差异 规格 评论

差异

Samsung M471B5273EB0-CK0 4GB 需要考虑的原因
Samsung M471B5273EB0-CK0 4GB
报告一个错误
Corsair CMK32GX4M2C3333C16 16GB 需要考虑的原因
Corsair CMK32GX4M2C3333C16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 40
    左右 -67% 更低的延时
  • 更快的读取速度，GB/s
    20.4 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.8 left arrow 8.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273EB0-CK0 4GB
Corsair CMK32GX4M2C3333C16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 24
  • 读取速度，GB/s
    12.3 left arrow 20.4
  • 写入速度，GB/s
    8.9 left arrow 16.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1789 left arrow 4110

Samsung M471B5273EB0-CK0 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB

Corsair CMK32GX4M2C3333C16 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
内存RAM
Elpida EBJ40UG8BBU0-GN-F 4GB
Elpida EBJ40UG8BBU0-GN-F 4GB
Essencore Limited IM48GU48N28-GGGHM 8GB
Essencore Limited IM48GU48N28-GGGHM 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Gloway International (HK) STK4U2400D17081C 8GB
Gloway International (HK) STK4U2400D17081C 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
V-GEN D4H16GS24A8 16GB
V-GEN D4H16GS24A8 16GB
内存RAM
Heoriady M471A1K43BB1-CRC 16GB
Heoriady M471A1K43BB1-CRC 16GB
Kingston 9905783-025.A01G 16GB
Kingston 9905783-025.A01G 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Samsung V-GeN D4S8GL32A8TL 8GB
Samsung V-GeN D4S8GL32A8TL 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT4G4DFS8213.C8FAR 4GB
Crucial Technology CT4G4DFS8213.C8FAR 4GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMK32GX4M4A2400C14 8GB
Corsair CMK32GX4M4A2400C14 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology 78.C2GFK.AR20B 8GB
Apacer Technology 78.C2GFK.AR20B 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
SK Hynix HMA82GS6MFR8N-TF 16GB
SK Hynix HMA82GS6MFR8N-TF 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
King Tiger Technology TMKG8G3000C17(XMP) 8GB
King Tiger Technology TMKG8G3000C17(XMP) 8GB
内存RAM