Samsung M471B5273EB0-CK0 4GB vs Crucial Technology CT8G4DFS8213.M8FH 8GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Crucial Technology CT8G4DFS8213.M8FH 8GB

Crucial Technology CT8G4DFS8213.M8FH 8GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

更快的写入速度，GB/s

8.9 8.6

测试中的平均数值

Crucial Technology CT8G4DFS8213.M8FH 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8213.M8FH 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 40

左右 -54% 更低的延时
更快的读取速度，GB/s

14.5 12.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Crucial Technology CT8G4DFS8213.M8FH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 26
读取速度，GB/s

12.3 14.5
写入速度，GB/s

8.9 8.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1789 2486

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO1E34RCTV2-BZWS 32GB

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Kingston KHX2666C13D4/8GX 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

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Corsair CM4X16GC3000C15K4 16GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

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SK Hynix HMA81GU7AFR8N-UH 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Golden Empire CL19-25-25 D4-4000 4GB

Golden Empire CL19-25-25 D4-4000 4GB

Kingston 9905403-500.A01LF 8GB

Kingston 9905403-500.A01LF 8GB

Samsung M378A1K43EB2-CWE 8GB

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Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Corsair CMSX32GX4M2A3000C18 16GB

Corsair CMSX32GX4M2A3000C18 16GB

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Kingston 9965662-016.A00G 16GB

Crucial Technology BL16G32C16S4B.16FE 16GB

Crucial Technology BL16G32C16S4B.16FE 16GB