Samsung M471B5273EB0-CK0 4GB vs Crucial Technology CT8G4SFS8213.C8FBR1 8GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Crucial Technology CT8G4SFS8213.C8FBR1 8GB

Crucial Technology CT8G4SFS8213.C8FBR1 8GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

更快的写入速度，GB/s

8.9 8.8

测试中的平均数值

Crucial Technology CT8G4SFS8213.C8FBR1 8GB

需要考虑的原因
Crucial Technology CT8G4SFS8213.C8FBR1 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 40

左右 -54% 更低的延时
更快的读取速度，GB/s

13.9 12.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Crucial Technology CT8G4SFS8213.C8FBR1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 26
读取速度，GB/s

12.3 13.9
写入速度，GB/s

8.9 8.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1789 2291

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology BLT8G4D30BET4K.C8FD 8GB

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Smart Modular SH5641G8FJ8NWRNSQG 8GB

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SK Hynix HMA82GR7MFR8N-UH 16GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMSO32GX4M2A2133C15 16GB

Corsair CMSO32GX4M2A2133C15 16GB

Kingston KHX2133C14D4/8G 8GB

Kingston KHX2133C14D4/8G 8GB

Corsair CMK16GX4M2B3200C16 8GB

Corsair CMK16GX4M2B3200C16 8GB

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

Crucial Technology CT8G4DFS824A.M8FR 8GB

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SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

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AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Kingston XRMWRN-MIE2 16GB

Kingston XRMWRN-MIE2 16GB