Samsung M471B5273EB0-CK0 4GB vs Essencore Limited IM48GU48N24-FFFHM 8GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Essencore Limited IM48GU48N24-FFFHM 8GB

Essencore Limited IM48GU48N24-FFFHM 8GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Essencore Limited IM48GU48N24-FFFHM 8GB

需要考虑的原因
Essencore Limited IM48GU48N24-FFFHM 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 40

左右 -82% 更低的延时
更快的读取速度，GB/s

17.5 12.3

测试中的平均数值
更快的写入速度，GB/s

13.8 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Essencore Limited IM48GU48N24-FFFHM 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 22
读取速度，GB/s

12.3 17.5
写入速度，GB/s

8.9 13.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1789 3011

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Wilk Elektronik S.A. IRH2666D464L19/16G 16GB

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Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Essencore Limited IM48GU48N24-FFFHM 8GB

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Samsung M395T2863QZ4-CF76 1GB

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UMAX Technology D4-2133-4GB-512X8-L 4GB

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G Skill Intl F3-2400C11-8GSR 8GB

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Kingston KVR800D2N6/2G 2GB

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Samsung M4 70T2864QZ3-CF7 1GB

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Corsair CMWX16GC3200C16W2E 16GB

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Kingston 99U5458-002.A00LF 2GB

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Corsair CMR32GX4M2F3600C18 16GB

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Corsair CMT64GX4M8Z3600C16 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

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G Skill Intl F4-5333C22-8GTRG 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

Kingston XRMWRN-MIE 16GB

Kingston XRMWRN-MIE 16GB

Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

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Kingston 9905403-444.A00LF 4GB

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Wilk Elektronik S.A. GR3200S464L22/16G 16GB

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