Samsung M471B5273EB0-CK0 4GB vs G Skill Intl F4-3200C16-32GTRG 32GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

G Skill Intl F4-3200C16-32GTRG 32GB

G Skill Intl F4-3200C16-32GTRG 32GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

G Skill Intl F4-3200C16-32GTRG 32GB

需要考虑的原因
G Skill Intl F4-3200C16-32GTRG 32GB

报告一个错误

低于PassMark测试中的延时，ns

29 40

左右 -38% 更低的延时
更快的读取速度，GB/s

18.6 12.3

测试中的平均数值
更快的写入速度，GB/s

14.7 8.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

G Skill Intl F4-3200C16-32GTRG 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 29
读取速度，GB/s

12.3 18.6
写入速度，GB/s

8.9 14.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1789 3765

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Crucial Technology CT8G4DFRA266.C8FJ 8GB

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GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

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Corsair CMK16GX4M2K4133C19 8GB

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Micron Technology 16ATF2G64AZ-2G6E1 16GB

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Kingston ACR512X64D3S13C9G 4GB

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Kllisre M378A5143EB2-CRC 4GB

Kllisre M378A5143EB2-CRC 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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AMD AE34G2139U2 4GB

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